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2SC3938G データシートの表示(PDF) - Panasonic Battery Group

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2SC3938G
PANASONICBATTERY
Panasonic Battery Group PANASONICBATTERY
2SC3938G Datasheet PDF : 4 Pages
1 2 3 4
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3938G
Silicon NPN epitaxial planar type
For high-speed switching
Features
/ Low collector-emitter saturation voltage VCE(sat)
S-Mini type package, allowing downsizing of the equipment and
e automatic insertion through the tape packing
c tage. Absolute Maximum Ratings Ta = 25°C
n d le s Parameter
Symbol Rating
Unit
yc Collector-base voltage (Emitter open) VCBO
40
V
a e lifec Collector-emitter voltage (E-B short) VCES
40
V
t Emitter-base voltage (Collector open) VEBO
5
V
n u duc Collector current
IC
100
mA
ro Peak collector current
ICP
300
mA
te tin r P Collector power dissipation
PC
150
mW
fou . Junction temperature
Tj
150
°C
ing type tion Storage temperature
Tstg 55 to +150 °C
Package
Code
SMini3-F2
Marking Symbol: 2Y
Pin Name
1. Base
2. Emitter
3. Collector
ain onludes faoilnlotewnanncceetyupeed typpeed test info.rjpm/ean/ Electrical Characteristics Ta = 25°C ± 3°C
o Parameter
Symbol
Conditions
Min Typ Max Unit
c inc d m tena ntin d ty t la ic.c Collector-base cutoff current (Emitter open) ICBO VCB = 40 V, IE = 0
ed ne in co ue ou on Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0
M is tinu pla ma dis tin ab as Forward current transfer ratio *
hFE VCE = 1 V, IC = 10 mA
60
iscon laned iscon URL .pan Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
n Base-emitter saturation voltage
VBE(sat) IC = 10 mA, IB = 1 mA
/D p d ing ico Transition frequency
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz
D nce llow em Collector output capacitance
a fo .s (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
0.1
0.1
200
0.17 0.25
1
450
2
6
µA
µA
V
V
MHz
pF
n it w Turn-on time
ainte e vis ://ww Turn-off time
M as ttp Storage time
ton Refer to the measurement circuit
toff
tstg
17
ns
17
ns
10
ns
Ple h Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
60 to 120
90 to 200
Publication date: April 2007
SJC00364AED
1

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