2SD2300 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SD2300

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SD2300

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector surge current

Collector power dissipation

Junction temperature

Storage temperature

C to E diode forward current

Note: 1. Value at TC = 25°C.

Symbol

VCES

VEBO

IC

IC(peak)

IC(surge)

PC*1

Tj

Tstg

ID

Ratings

1500

6

5

6

16

50

150

–55 to +150

6

Unit

V

V

A

A

A

W

°C

°C

A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Emitter to base breakdown

V(BR)EBO

6

—

voltage

Collector cutoff current

ICES

—

—

DC current transfer ratio

hFE

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter saturation

VBE(sat)

—

—

voltage

C to E diode forward voltage VECF

—

—

Fall time

tf

—

—

Max

—

Unit

V

Test conditions

IE = 350 mA, IC = 0

500 µA

20

5

V

VCE = 1500 V, RBE = 0

VCE = 5 V, IC = 1 A

IC = 4.5 A, IB = 1.2 A

1.5 V

IC = 4.5 A, IB = 1.2 A

3.0 V

1.0 µs

IF = 6 A

ICP = 4 A, IB1 = 0.8 A,

IB2 ≈ –1.5 A

2

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