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2SD1509 データシートの表示(PDF) - Toshiba
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2SD1509
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
2SD1509 Datasheet PDF : 5 Pages
1
2
3
4
5
500
300
1.6
I
C
– V
CE
250
200
Common emitter
Tc = 25°C
180
170
0.8
165
IB = 160
μ
A
0
0
0
2
4
6
8
Collector-emitter voltage V
CE
(V)
V
CE (sat)
– I
C
3
Common emitter
IC/IB = 1000
1
Tc =
−
55°C
25
100
0.5
0.3
0.5
1
3
5
Collector current I
C
(A)
2SD1509
10000
5000
3000
Common emitter
VCE = 2 V
h
FE
– I
C
1000
500
300
Tc = 100°C
25
−
55
100
50
30
0.01
0.03 0.05 0.1
0.3 0.5 1
Collector current I
C
(A)
35
V
BE (sat)
– I
C
5
Common emitter
IC/IB = 1000
3
Tc =
−
55°C
25
1
0.3
100
0.5
1
3
5
Collector current I
C
(A)
I
C
– V
BE
Common emitter
VCE = 2 V
1.6
Tc = 100°C
25
0.8
−
55
0
0
0.8
1.6
2.4
3.2
Base-emitter voltage V
BE
(V)
16
12
(1)
8
P
C
– Ta
(1) Tc = Ta
Infinite heat sink
(2) No heat sink
4
(2)
0
0
40
80
120
160
200
240
Ambient temperature Ta (°C)
3
2009-12-21
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