2SD1893 データシートの表示（PDF） - Panasonic Corporation
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2SD1893 Datasheet PDF : 3 Pages
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Power Transistors
80
70
60
(1)
50
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3W)
40
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=1000
30
10
3
1 –25˚C
TC=100˚C
0.3
25˚C
0.1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30
IC/IB=1000 (IB1=–IB2)
VCC=50V
10
TC=25˚C
tstg
3
ton
1
tf
0.3
0.1
0.03
0.01
0
4
8
12
16
Collector current IC (A)
IC — VCE
12
TC=25˚C
10
IB=5mA
8
1mA
0.9mA
0.8mA
0.7mA
6
0.6mA
0.5mA
4
0.4mA
0.3mA
2
0.2mA
0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1893
VBE(sat) — IC
100
IC/IB=1000
30
10
3
TC=–25˚C
1
100˚C
25˚C
0.3
0.1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
hFE — IC
105
VCE=5V
104
TC=100˚C
103
25˚C
–25˚C
102
10
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
1
3
10
30
100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100
30
10 ICP
IC
3
1
Non repetitive pulse
TC=25˚C
t=1ms
10ms
DC
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2
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