2SD1506 データシートの表示（PDF） - SavantIC Semiconductor
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2SD1506 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1506
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50µA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50µA ,IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
COB
Output capacitance
IC=2A; IB=0.2A
VCB=40V; IE=0
VEB=4V; IC=0
IC=0.5A ; VCE=3V
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=5V
MIN TYP. MAX UNIT
50
V
60
V
5
V
1.0
V
1.5
V
1.0
µA
1.0
µA
56
390
40
pF
90
MHz
hFE Classifications
N
P
Q
R
56-120 82-180 120-270 180-390
2
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