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2SJ479 データシートの表示(PDF) - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
メーカー
2SJ479
Silicon P Channel DV–L MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ479 Datasheet PDF : 7 Pages
1
2
3
4
5
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7
2SJ479(L), 2SJ479(S)
Silicon P Channel DV–L MOS FET
High Speed Power Switching
Features
•
Low on-resistance
R
DS(on)
= 25 m
Ω
typ.
•
4V gate drive devices.
•
High speed switching
Outline
LDPAK
4
4
D
1
2
3
G
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
S
ADE-208-541
1st. Edition
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