2SJ479 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SJ479

Silicon P Channel DV–L MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ479(L), 2SJ479(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

Symbol

VDSS

VGSS

ID

I Note1

D(pulse)

I DR

Pch Note2

Tch

Tstg

Ratings

Unit

–30

V

±20

V

–30

A

–120

A

–30

A

50

W

150

°C

–55 to +150

°C

2

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