2SJ479 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SJ479

Silicon P Channel DV–L MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Drain to source breakdown

voltage

V(BR)DSS

Gate to source breakdown

voltage

V(BR)GSS

Zero gate voltege drain

I DSS

current

Gate to source leak current IGSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

RDS(on)

Forward transfer admittance |yfs|

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance Crss

Turn-on delay time

t d(on)

Rise time

tr

Turn-off delay time

t d(off)

Fall time

tf

Body to drain diode forward VDF

voltage

Body to drain diode reverse trr

recovery time

Note: 3. Pulse test

Min

–30

±20

—

—

–1.0

—

—

12

—

—

—

—

—

—

—

—

—

Typ Max

—

—

—

—

—

–10

—

±10

—

–2.0

25

35

40

60

20

—

1700 —

950 —

260 —

20

—

290 —

170 —

130 —

–1.1 —

70

—

2SJ479(L), 2SJ479(S)

Unit

V

V

µA

µA

V

mΩ

mΩ

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test Conditions

ID = –10mA, VGS = 0

IG = ±100µA, VDS = 0

VDS = –30 V, VGS = 0

VGS = ±16V, VDS = 0

ID = –1mA, VDS = –10V

ID = –15A, VGS = –10V Note3

ID = –15A, VGS = –4V Note3

ID = –15A, VDS = –10V Note3

VDS = –10V

VGS = 0

f = 1MHz

VGS = –10V, ID = –15A

RL = 0.67Ω

IF = –30A, VGS = 0

IF = –30A, VGS = 0

diF/ dt = 50A/µs

See characteristic curves of 2SJ471

3

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