2SJ324 データシートの表示（PDF） - KEXIN Industrial

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2SJ324

MOS Field Effect Power Transistors

KEXIN Industrial 

SMD Type

MOSFICET

MOS Field Effect Power Transistors

2SJ324

Features

Low on-state resistance

RDS(on)=0.18 (VGS=-10V,ID=-1A)

RDS(on)=0.36 (VGS=-4V,ID=-0.8A)

Built-in G-S Gate Protection Diode

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

Unit: mm

0.80+0.1

-0.1

0.127

max

2.3

4.60+0.15

-0.15

0.60+0.1

-0.1

1 Gate

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage (DC)

Gate to source voltage (AC)

Drain current (DC)

Drain current(pulse) *

Power dissipation TC=25

TA=25

Channel temperature

Storage temperature

Symbol

Rating

Unit

VDSS

-30

V

VGSS

-20,+10

V

VGSS

20

V

ID

2.0

A

ID

8.0

A

20

W

PD

1.0

W

Tch

150

Tstg

-55 to +150

* PW 10 s; d 1%.

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