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2SK3637 データシートの表示(PDF) - Panasonic Corporation
部品番号
コンポーネント説明
メーカー
2SK3637
Silicon N-channel power MOSFET
Panasonic Corporation
2SK3637 Datasheet PDF : 3 Pages
1
2
3
2SK3637
■
Electrical Characteristics (Continued)
T
C
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min Typ Max Unit
Total gate charge
Gate-source charge
Q
g
V
DD
=
100 V, I
D
=
25 A
Q
gs
V
GS
=
10 V
85
nC
30
nC
Gate-drain charge
Q
gd
12
nC
Channel-case heat resistance
R
th(ch-c)
1.25 °C/W
Channel-atmosphere heat resistance R
th(ch-a)
41.6 °C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
10
3
I
DP
10
2
I
D
Safe operation area
Non repetitive pulse
T
C
=
25
°
C
t
=
100
µ
s
DC
10
1 ms
10 ms
1
100 ms
10
−
1
1
10
10
2
10
3
Drain-source voltage V
DS
(V)
2
SJG00035AED
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