2SK549 データシートの表示（PDF） - Inchange Semiconductor
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2SK549 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK549
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A
IGSS
Gate Source Leakage Current
VGS= ±12V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=50V; VGS= 0
VSD
Diode Forward Voltage
IF=10A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=5A;
RL=6Ω
toff
Turn-off time
MIN TYP MAX UNIT
60
V
2.0
4.0
V
0.1 0.15
Ω
±10 uA
250
uA
1.2
V
40
ns
55
ns
45
ns
100
ns
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