MCH6436 データシートの表示（PDF） - ON Semiconductor

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MCH6436

Power MOSFET 30V, 34mΩ, 6A, Single N-Channel

ON Semiconductor 

MCH6436

Power MOSFET

30V, 34mΩ, 6A, Single N-Channel

www.onsemi.com

Features

• Low On-Resistance

• 1.8V Drive

• High Speed Switching

• ESD Diode-Protected Gate

• Pb-Free and RoHS Compliance

Specifications

Absolute Maximum Ratings at Ta = 25°C

Parameter

Symbol

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

VDSS

VGSS

ID

Drain Current (Pulse)

PW≤10μs, duty cycle≤1%

IDP

Power Dissipation

When mounted on ceramic substrate

PD

(1500mm2 × 0.8mm)

Junction Temperature

Tj

Storage Temperature

Tstg

Thermal Resistance Ratings

Parameter

Junction to Ambient

When mounted on ceramic substrate

(1500mm2 × 0.8mm)

Symbol

RθJA

Value

Unit

30

V

±12

V

6

A

24

A

1.5

W

150

°C

−55 to +150

°C

Value

Unit

83.3

°C/W

VDSS

30V

RDS(on) Max

34mΩ@ 4.5V

49mΩ@ 2.5V

69mΩ@ 1.8V

ID Max

6A

Electrical Connection

N-Channel

1, 2, 5, 6

1 : Drain

3

2 : Drain

3 : Gate

4 : Source

5 : Drain

4

6 : Drain

Packing Type : TL Marking

ZK

TL

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2015

1

March 2015 - Rev. 3

Publication Order Number :

MCH6436/D

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