RB715F データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd
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RB715F Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
RB715F SCHOTTKY BARRIER DIODE
FEATURES:
Extra small power mold type
Low VF
High reliability
MARKING: 3D
SOT-323
1
3
2
Solid dot = Green molding compound device,if none,
the normal device.
Maximum Ratings @Ta=25 ℃
Parameter
Symbol
Peak reverse voltage
VRM
DC reverse voltage
VR
1RQUHSHWLWLYHPeak )orward 6urge
&urrent#W PV
IFSM
Average forward current
IO
Power dissipation
PD
Thermal Resistance Junction to Ambient 5ș-$
Junction temperature
Tj
Storage temperature
Tstg
Limit
40
40
200
30
200
500
125
-55+~150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse voltage leakage current
Symbol
IR
Test conditions
VR=10V
Min
Typ
Forward voltage
VF
IF=1mA
Capacitance between terminals
CT
VR=1V, f=1MHz
2.0
Unit
V
V
mA
mA
mW
℃/W
℃
℃
Max
Unit
1
μA
0.37
V
pF
www.cj-elec.com
1
D,Oct,2015
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