RZ10A データシートの表示（PDF） - New Jersey Semiconductor
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RZ10A Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
RZ6A - RZ18B
ZENER DIODES
DIODESZENER
BOW siliconZanerdlodns ;
• Hermetically sealed metal according to
normalization CCTU : F10 and JEDEC DO-6.
• Available wfth anode to case or cathode to
case connections.
• High surge capability: 300 W® 10ms.
Dio des Zener de 50 W au slllcium:
• Encapsuties metal salon normalisation
CCTU: F Wet JEDEC DO-S.
• Disponible avec anode ou cathode reltee au
boitier.
• Forte tenue en surcharge: 300 W® 10ms.
Ptot = 20 W
6,8 V -S VZT n°«n < 180 V
Cathode connected to case
RZ6A — RZ18B
Anode connected to c»se
RZ6AR -«• R218BR
ABSOLUTE RATINGS (LIMITINQ VALUES]
VALEURSLIMITESABSOLUESD-U7ILISATION
T
-,,or
T»mb " '" *•
DC power dissipation (see ftg. 1 1
Dissipation de puissance an rig/me permanent ivoir fig. 11
Continuous r»v«rto cunent
Courent iavtrst continU
Non repotrtivs surge peak power dissipation (1=10 ms) (see fig. 7)
Puissance da surcharge crite accidenrtfo (t = lOmsttvoirfig. 7>
Oporating temperature
Tempiratura da fonethnntmem
Storage temperature
Timptrtwre de stockage
Maiirnum junction temperature
J'emptntuie maximale da junction
Ptot
IZM
PRSM
Toper
T«tg
T|
20
W
See pag« 2
Vofr page 2
mA
300
W
-85-*+ 150 °C
- 65-*+ 150 "C
IbO
"C
j
Junction-case thermal rtsisrsncs
:fttsistonce ttiermtouejonctton-boltier
(TI™'
Rth (I-c)
3,75
•C/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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