ISPLSI1016E-100LJNI データシートの表示（PDF） - Lattice Semiconductor

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ISPLSI1016E-100LJNI

In-System Programmable High Density PLD

Lattice Semiconductor 

Specifications ispLSI 1016E

Absolute Maximum Ratings 1

Supply Voltage VCC ................................. -0.5 to +7.0V

Input Voltage Applied ........................ -2.5 to VCC +1.0V

Off-State Output Voltage Applied ..... -2.5 to VCC +1.0V

Storage Temperature ................................ -65 to 150°C

S Case Temp. with Power Applied .............. -55 to 125°C

N Max. Junction Temp. (TJ) with Power Applied ... 150°C

IG 1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional

operation of the device at these or at any other conditions above those indicated in the operational sections of this specification

S is not implied (while programming, follow the programming specifications).

DE DC Recommended Operating Conditions

SYMBOL

W VCC

NE VIL

VIH

Supply Voltage

Input Low Voltage

Input High Voltage

PARAMETER

Commercial TA = 0°C to + 70°C

Industrial

TA = -40°C to + 85°C

FOR Capacitance (TA=25oC, f=1.0 MHz)

MIN.

4.75

4.5

0

2.0

MAX. UNITS

5.25

V

5.5

V

0.8

V

Vcc+1

V

Table 2-0005/1016E

SYMBOL

PARAMETER

A C1

Dedicated Input, I/O, Y1, Y2, Y3, Clock Capacitance

E (Commercial/Industrial)

6 C2

Y0 Clock Capacitance

01 Data Retention Specifications

I 1 PARAMETER

S Data Retention

ispL Erase/Reprogram Cycles

MINIMUM

20

10000

TYPICAL

8

UNITS

pf

12

pf

MAXIMUM

–

–

TEST CONDITIONS

VCC = 5.0V, VPIN = 2.0V

VCC = 5.0V, VPIN = 2.0V

Table 2-0006/1016E

UNITS

Years

Cycles

Table 2-0008/1016E

USE

3

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