SD103B データシートの表示（PDF） - Vishay Semiconductors
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SD103B Datasheet PDF : 4 Pages
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SD103A, SD103B, SD103C
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Reverse breakdown voltage
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
SD103A
V(BR)
40
IR = 50 μA
SD103B
V(BR)
30
SD103C
V(BR)
20
VR = 30 V
SD103A
IR
VR = 20 V
SD103B
IR
VR = 10 V
SD103C
IR
IF = 20 mA
VF
IF = 200 mA
VF
VR = 0 V, f = 1 MHz
CD
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
trr
TYP.
50
10
MAX.
5
5
5
370
600
UNIT
V
V
V
μA
μA
μA
mV
mV
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
10
1
0.1
0.01
0.001
0 100 200 300 400 500 600 700 800 900 1000
16765
VF - Forward Voltage (mV)
Fig. 1 - Forward Current vs. Forward Voltage
10 000
1000
100
10
1
0
16767
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Fig. 3 - Reverse Current vs. Junction Temperature
5
4
3
2
1
0
0.0
16766
0.5
1.0
1.5
2.0
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
30
f = 1 MHz
25
20
15
10
5
0
0
16768
5
10 15 20 25 30
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 1.9, 01-Jun-17
2
Document Number: 85754
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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