RB421D データシートの表示（PDF） - SHENZHEN YONGERJIA INDUSTRY CO.,LTD
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RB421D Datasheet PDF : 1 Pages
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RB421D
WEJ ELECTRONIC CO.,LTD RB421D Schottky barrier Diodes
FEATURES
z Small surface mounting type
z Low reverse current and low forward voltage
z High reliability
Marking: D3C
SOT-23-3L
-
+
2. 80¡ À0. 05
1. 60¡ À0. 05
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
40
V
DC reverse voltage
VR
40
V
Mean rectifying current
IO
100
mA
Peak forward surge current
IFSM
1
A
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40~+125
℃
Electrical Ratings @TA=25℃
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max. Unit
VF1
0.55 V
VF2
0.34 V
IR
30 µA
CT
6
pF
Conditions
IF=100mA
IF=10mA
VR=10V
VR=10V, f=1MHZ
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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