CM75TF-28H データシートの表示（PDF） - MITSUBISHI ELECTRIC
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CM75TF-28H Datasheet PDF : 4 Pages
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MITSUBISHI IGBT MODULES
CM75TF-28H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E-SHORT)
Gate-Emitter Voltage (C-E-SHORT)
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Mounting Torque, M5 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
–
Mounting Torque, M5 Mounting
–
Weight
–
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
ICES
IGES
VGE(th)
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 7.5mA, VCE = 10V
Collector-Emitter Saturation Voltage
Total Gate Charge
VCE(sat)
QG
IC = 75A, VGE = 15V
IC = 75A, VGE = 15V, Tj = 150°C
VCC = 800V, IC = 75A, VGE = 15V
Emitter-Collector Voltage
VEC
IE = 75A, VGE = 0V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
CM75TF-28H
–40 to 150
–40 to 125
1400
±20
75
150*
75
150*
600
1.47 ~ 1.96
1.47 ~ 1.96
830
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
Grams
Vrms
Min.
Typ. Max. Units
–
–
1.0
mA
–
–
0.5
µA
5.0
6.5
8.0
Volts
–
3.1
4.2** Volts
–
2.95
–
Volts
–
383
–
nC
–
–
3.8
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Cies
Coes
Cres
VGE = 0V, VCE = 10V
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
td(on)
tr
td(off)
tf
trr
Qrr
VCC = 800V, IC = 75A,
VGE1 = VGE2 = 15V, RG = 4.2Ω
IE = 75A, diE/dt = –150A/µs
IE = 75A, diE/dt = –150A/µs
Min.
Typ. Max. Units
–
–
15
nF
–
–
5.3 nF
–
–
3
nF
–
–
150
ns
–
–
350
ns
–
–
250
ns
–
–
500
ns
–
–
300
ns
–
0.75
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
–
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
–
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
Typ. Max. Units
–
0.21 °C/W
–
0.47 °C/W
–
0.025 °C/W
Sep.1998
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