IRF540PBF データシートの表示（PDF） - Kersemi Electronic Co., Ltd.
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IRF540PBF Datasheet PDF : 7 Pages
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IRF540, SiHF540
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 17 Ab
VDS = 50 V, ID = 17 Ab
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
100
-
-
V
-
0.13
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.077 Ω
8.7
-
-
S
-
1700
-
-
560
-
pF
-
120
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
-
72
ID = 17 A, VDS = 80 V,
Qgs
VGS = 10 V
see fig. 6 and 13b
-
-
11
nC
Qgd
-
-
32
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 50 V, ID = 17 A
RG = 9.1 Ω, RD = 2.9 Ω, see fig. 10b
-
11
-
-
44
-
ns
-
53
-
-
43
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
D
6 mm (0.25") from
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-
-
28
A
-
-
110
Body Diode Voltage
VSD
TJ = 25 °C, IS = 28 A, VGS = 0 Vb
-
-
2.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µsb
180
360
ns
Qrr
-
1.3
2.8
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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