TIPL760C データシートの表示（PDF） - Inchange Semiconductor

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TIPL760C

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

TIPL760C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA

IC= 2A, IB= 0.4A

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A, IB= 0.6A

IC= 3A, IB= 0.6A,Tc=100℃

IC= 2A, IB= 0.4A

VBE(sat) Base-Emitter Saturation Voltage

IC= 3A, IB= 0.6A

IC= 3A, IB= 0.6A,Tc=100℃

ICEO

Collector Cutoff current

VCE= 550V, IE= 0

IEBO

Emitter Cutoff current

VEB= 10V, IC= 0

hFE

DC Current Gain

IC= 0.5A; VCE= 5V

MIN TYP. MAX UNIT

550

V

1.0

V

2.5

V

5

V

1.2

V

1.4

V

1.3

V

50

µA

1

mA

20

60

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