SI2301BDS-3 データシートの表示（PDF） - KEXIN Industrial

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SI2301BDS-3

P-Channel Enhancement MOSFET

KEXIN Industrial 

SMD Type

P-Channel Enhancement MOSFET

SI2301BDS (KI2301BDS)

MOSFET

■ Features

● VDS (V) =-20V

● RDS(ON) ＜ 100mΩ (VGS =-4.5V)

● RDS(ON) ＜ 150mΩ (VGS =-2.5V)

G1

S2

3D

SOT-23

2.9 +0.1

-0.1

0.4 +0.1

-0.1

3

1

2

0.95 +0.1

-0.1

1.9 +0.1

-0.1

Unit: mm

0.1 +0.05

-0.01

1.Gate

2.Source

3.Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current *1

Ta=25℃

Ta=70℃

Pulsed Drain Current *2

Power Dissipation *1

Ta=25℃

Ta=70℃

Thermal Resistance.Junction- to-Ambient *1

*3

Junction Temperature

Storage Temperature Range

Symbol

VDS

VGS

ID

IDM

PD

RthJA

TJ

Tstg

*1 Surface Mounted on FR4 Board, t ≤ 5 sec.

*2 Pulse width limited by maximum junction temperature.

*3 Surface Mounted on FR4 Board.

5 sec

Steady State

-20

±8

-2.4

-2.2

-1.9

-1.8

-10

0.9

0.7

0.57

0.45

120

145

140

175

150

-55 to 150

Unit

V

A

W

℃/W

℃

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