SI2301BDS-3 データシートの表示（PDF） - KEXIN Industrial

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SI2301BDS-3

P-Channel Enhancement MOSFET

KEXIN Industrial 

SMD Type

MOSFET

P-Channel Enhancement MOSFET

SI2301BDS (KI2301BDS)

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-Source Breakdown Voltage

Symbol

VDSS

Zero Gate Voltage Drain Current

IDSS

Gate-Body leakage current

Gate Threshold Voltage

IGSS

VGS(th)

Static Drain-Source On-Resistance

RDS(On)

On state drain current *1

Forward Transconductance *1

Input Capacitance *2

Output Capacitance *2

Reverse Transfer Capacitance *2

Total Gate Charge *2

Gate Source Charge *2

Gate Drain Charge *2

Turn-On DelayTime *3

Turn-On Rise Time *3

Turn-Off DelayTime *3

Turn-Off Fall Time *3

Maximum Body-Diode Continuous Current

Diode Forward Voltage

ID(ON)

gFS

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

IS

VSD

Test Conditions

ID=-250μA, VGS=0V

VDS=-20V, VGS=0V

VDS=-20V, VGS=0V, TJ=55℃

VDS=0V, VGS=±8V

VDS=VGS ID=-250μA

VGS=-4.5V, ID=-2.8A

VGS=-2.5V, ID=-2.0A

VGS=-4.5V, VDS ≤ -5V

VGS=-2.5V, VDS ≤ -5V

VDS=-5V, ID=-2.8A

VGS=0V, VDS=-6V, f=1MHz

VGS=-4.5V, VDS=-6V, ID=-2.8A

VGS=-4.5V, VDS=-6V, RL=6Ω,RGEN=6Ω

ID=-1.0A

5 sec

Steady State

IS=-0.75A,VGS=0V

Min Typ Max Unit

-20

V

-1

μA

-10

±100 nA

-0.45

-0.95 V

80 100

mΩ

110 150

-6

A

-3

6.5

S

375

95

pF

65

4.5 10

0.7

nC

1.1

20 30

40 60

ns

30 45

20 30

-0.72

A

-0.6

-0.8 -1.2 V

*1 Pulse test: PW ≤ 300us duty cycle ≤ 2%.

*2 For DESIGN AID ONLY, not subject to production testing.

*3 Switching time is essentially independent of operating temperature.

■ Marking

Marking

L1*

2 www.kexin.com.cn

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