SI2301BDS-3 データシートの表示（PDF） - KEXIN Industrial
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SI2301BDS-3 Datasheet PDF : 5 Pages
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SMD Type
MOSFET
P-Channel Enhancement MOSFET
SI2301BDS (KI2301BDS)
■ Typical Characterisitics
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.6
T J = 150 C
1
T J = 25 C
0.5
0.4
ID = 2.8 A
0.3
0.2
0.1
0.1
0
0.2 0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
0.0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.4
Single Pulse Power
10
0.3
8
0.2
ID = 250 A
6
0.1
4
0.0
- 0.1
2
- 0.2
- 50 - 25 0
.
25 50 75 100 125 150
0
0.01
0.1
T J - Temperature ( C )
100
Safe Operating Area
TA = 25 C
1
10
Time (sec)
100
1000
4 www.kexin.com.cn
10
10 s
100 s
1
1 ms
TA = 25 C
Single Pulse
0.1
10 ms
100 ms
0.01
0.1
dc, 100 s, 10 s, 1 s
1
10
100
VDS - Drain-to-Source Voltage (V)
Square Wave Pulse Duration (sec)
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