TC1070(2002) データシートの表示（PDF） - Microchip Technology

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TC1070
(Rev.:2002)

50mA, 100mA and 150mA Adjustable CMOS LDOs with Shutdown

Microchip Technology 

TC1070/TC1071/TC1187

5.0 TYPICAL CHARACTERISTICS (CONTINUED)

Measure Rise Time of 3.3V LDO

Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 4.3V,

Temp = 25°C, Fall Time = 184µS

Measure Fall Time of 3.3V LDO

Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 4.3V,

Temp = 25°C, Fall Time = 52µS

VSHDN

VSHDN

VOUT

VOUT

Measure Rise Time of 5.0V LDO

Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 6V,

Temp = 25°C, Fall Time = 192µS

VSHDN

VOUT

Measure Fall Time of 5.0V LDO

Conditions: CIN = 1µF, COUT = 1µF, ILOAD = 100mA, VIN = 6V,

Temp = 25°C, Fall Time = 88µS

VSHDN

VOUT

Thermal Shutdown Response of 5.0V LDO

Conditions: VIN = 6V, CIN = 0µF, COUT = 1µF

VOUT

ILOAD was increased until temperature of die reached about 160°C, at

which time integrated thermal protection circuitry shuts the regulator

off when die temperature exceeds approximately 160°C. The regulator

remains off until die temperature drops to approximately 150°C.

DS21353B-page 10

© 2002 Microchip Technology Inc.

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