Product Data Sheet
August 5, 2008
TGA2507
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C, Nominal)
PARAMETER
Drain Operating
Quiescent Current
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power @ 1 dB Compression Gain
TYPICAL
6
80 ± 10% Self Bias
28
15
20
20
UNITS
V
mA
dB
dB
dB
dBm
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions TCH
RθJC
TM
(oC) (°C/W) (HRS)
RθJC Thermal
Resistance
Vd = 6 V
Id = 80 mA
108
80 5.2 E+7
(channel to backside of Pdiss = 0.48 W
carrier)
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70oC baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com