VCR2N データシートの表示（PDF） - Toshiba

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VCR2N

JFET Voltage-Controlled Resistors

Toshiba 

VCR2N/4N/7N

Vishay Siliconix

JFET Voltage-Controlled Resistors

PRODUCT SUMMARY

Part Number

VGS(off) Max (V)

VCR2N

−7

VCR4N

−7

VCR7N

−5

V(BR)GSS Min (V)

−25

−25

−25

rDS(on) Max (W)

60

600

8000

FEATURES

D Continuous Voltage-Controlled

Resistance

D High Off-Isolation

D High Input Impedance

BENEFITS

D Gain Ranging Capability/Wide Range

Signal Attenuation

D No Circuit Interaction

D Simplified Drive

APPLICATIONS

D Variable Gain Amplifiers

D Voltage Controlled Oscillator

D AGC

DESCRIPTION

The VCR2N/4N/7N JFET voltage controlled resistors have an

ac drain-source resistance that is controlled by a dc bias

voltage (VGS) applied to their high impedance gate terminal.

Minimum rDS occurs when VGS = 0 V. As VGS approaches the

pinch-off voltage, rDS rapidly increases. This series of junction

FETs is intended for applications where the drain-source

voltage is a low-level ac signal with no dc component.

Key to device performance is the predictable rDS change

versus VGS bias where:

Ť Ť rDS(@ VGS + 0)

rDSbias [

VGS

1– VGS(off)

These n-channel devices feature rDS(on) ranging from 20 to

8000 W . All packages are hermetically sealed and may be

processed per MIL-S-19500 (see Military Information).

TO-206AA

(TO-18)

S

1

2

3

D

Top View

VCR2N, VCR4N

G and Case

For applications information see AN105.

Document Number: 70293

S-41225—Rev. F, 28-Jun-04

TO-206AF

(TO-72)

S

1

C

4

2

D

3

G

Top View

VCR7N

www.vishay.com

1

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