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UF600 データシートの表示(PDF) - New Jersey Semiconductor

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UF600
NJSEMI
New Jersey Semiconductor NJSEMI
UF600 Datasheet PDF : 2 Pages
1 2
RATING AND CHARACTERISTIC CURVES
UF600 THRU UF608
k- trr-H
25Vdc
(approx)
H
') OSCILLOSCOPE
NOTE:1 .Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
SET TIME —*|l
BASE FOR
50 ns/cm
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
\E PHASE
0 .2 .4 .6 .S 1.0 1.2 1.4 l.fi
FORWARD VOLTAGE-VFM(Vpk)
Fig. 2-FORWARD CHARACTERISTICS
\ HALF WAVE 60Hz
RESISTIVE OR
INDUCTIVE
LOAD .375' LEAD
LENGTHS
S 5 ) 75 I(K) 125 150 17
AMBIENT TEMPERATURE,
Fig. 3-FORWARD CURRENT DERATING CURVE
otr:
s
to 5
O
L1J
0 20 40 60 SI) HX) 120
PERCENT OF RATED PEAK REVERSE VOLTAGE,
Fig. 4-TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
uoa::
Zo)
LOaU: muj
=1 ct
CO LU
I*Q IE ^ 3
oo:
u.
§
LU
CL
\
3rrsSIN GLEH* LF SIN E-WA VE
rj 25 •
Si
••v *ss
»,.
"^*,
"•-, •^
•• k .
2
4 6 8 1 0 20
40 dO SO 100
NUMBER OF CYCLES AT 60Hz
Fig. 5-PEAK FORWARD SURGE CURRENT

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