UML2N データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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UML2N

SOT-353 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

TR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

Min

Collector-base breakdown voltage

V(BR)CBO IC=50μA,IE=0

60

Collector-emitter breakdown voltage

V(BR)CEO IC=1mA,IB=0

50

Emitter-base breakdown voltage

V(BR)EBO IE=50μA,IC=0

6

Collector cut-off current

ICBO

VCB=60V,IE=0

Emitter cut-off current

IEBO

VEB=5V,IC=0

DC current gain

hFE

VCE=6V,IC=1mA

120

Collector-emitter saturation voltage

Transition frequency

VCE(sat)

fT

IC=50mA,IB=5mA

VCE=12V,IC=2mA,f=100MHz

Collector output capacitance

Cob

VCB=12V,IE=0,f=1MHz

Typ Max

0.1

0.1

560

0.4

180

3.5

Unit

V

V

V

μA

μA

V

MHz

pF

DIO Electrical Ratings @Ta=25℃

Parameter

Forward voltage

Reverse current

Capacitance between terminals

Reverse Recovery Time

Symbol

VF

IR

CT

trr

Min.

Typ.

Max. Unit

1.2

V

0.1

μA

3.5

pF

4

ns

Conditions

IF=100mA

VR=70V

VR=6V,f=1MHz

VR=6V,

IF=5mA,RL=50Ω

www.cj-elec.com

2

C,Mar,2016

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