SNA-276 データシートの表示（PDF） - Stanford Microdevices

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SNA-276

DC-6.5 GHz, Cascadable GaAs MMIC Amplifier

Stanford Microdevices 

Absolute Maximum Ratings

Param eter

D evic e C urrent

Power Dissipation

RF Input Power

Ju n ction Te m p e ra ture

O p e ra tin g Te m p e ra tu re

Sto ra g e Te m pe ra tu re

A bsolute

M axim um

70mA

320m W

100m W

+200C

-45C to +85C

-65C to +150C

Notes:

1. Operation of this device above any one of

these parameters may cause permanent

damage.

MTTF vs. Temperature @ Id = 50mA

Junction

Lead Temperature

MTTF (hrs)

Temperature

+45C

+155C

1000000

+80C

+190C

100000

+110C

+220C

10000

Thermal Resistance (Lead-Junction): 556° C/W

SNA-276 DC-6.5 GHz Cascadable MMIC Amplifier

Part Number Ordering Information

Part Number Devices Per Reel

SNA-276-TR1

1000

SNA-276-TR2

3000

SNA-276-TR3

5000

Reel Size

7"

13"

13"

R ecom m ended B ias R esistor Values

Supply

5V

7 .5 V

9V

12V 15V

Voltage(Vs)

R bias (Ohms) 20

70

100 160 220

20V

320

Typical Biasing Configuration

Pin Designation

1

RF in

2

GND

RF out and

3

Bias

4

GND

Typical Performance at 25° C

Power Gain vs. Device Current

17

16

15

dB

14

60mA

50mA

40mA

13

30mA

25mA

12

0.2 0.5 1.0 1.25 1.5 1.75 2.0

GHz

Device Voltage vs. Id

5

4.5

Vd 4

3.5

3

25

30

40

50

60

70

80

mA

522 Almanor Ave., Sunnyvale, CA 94086

Phone: (800) SMI-MMIC

5-27

http://www.stanfordmicro.com

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