SNA-676 データシートの表示（PDF） - Stanford Microdevices

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SNA-676

DC-6.5 GHz, Cascadable GaAs MMIC Amplifier

Stanford Microdevices 

Absolute Maximum Ratings

Param eter

D evic e Current

Pow er D is sipation

RF Input Power

Ju n ctio n Tem p era tu re

O p e ratin g Te m p e ra tu re

Sto ra g e Te m p e ra ture

A b s o lu te

M axim um

110m A

700m W

200m W

+200C

-45C to +85C

-65C to +150C

Notes:

1. Operation of this device above any one of

these parameters may cause permanent

damage.

MTTF vs. Temperature @ Id = 70mA

Junction

Lead Temperature Temperature MTTF (hrs)

+55C

+155C

1000000

+90C

+190C

100000

+120C

+220C

10000

Thermal Resistance (Lead-Junction): 250° C/W

SNA-676 DC-6.5 GHz Cascadable MMIC Amplifier

Part Number Ordering Information

Part Number Devices Per Reel

SNA-676-TR1

1000

Reel Size

7"

SNA-676-TR2

3000

13"

SNA-676-TR3

5000

13"

R ecom m ended B ias R esistor Values

Supply

5V

7 .5 V

9V

12V 15V

Voltage(Vs)

R bias (Ohms) *

24

46

89

131

** Not Recommended

20V

203

Typical Biasing Configuration

Pin Designation

1

RF in

2

GND

3

RF out

and Bias

4

GND

Typical Performance at 25° C

Power Gain vs. Device Current

20mA Steps

12.0

11.5

11.0

80mA

10.5

dB 10.0

40mA

9.5

9.0

8.5

8.0

0.1 1.0 2.0 3.0 4.0 5.0 6.0

GHz

Device Voltage vs. Id

7

6.5

Vdc 6

5.5

5

50

55

60

65

70

75

80

mA

522 Almanor Ave., Sunnyvale, CA 94086

Phone: (800) SMI-MMIC

5-91

http://www.stanfordmicro.com

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