SI2328DS データシートの表示（PDF） - KEXIN Industrial
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SI2328DS Datasheet PDF : 4 Pages
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SMD Type
MOSFET
N-Channel Enhancement MOSFET
SI2328DS (KI2328DS)
■ Typical Characterisitics
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.6
0.5 ID = 1.5 A
1
T J = 150 C
0.4
0.3
0.1
0.2
T J = 25 C
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD − Source-to-Drain Voltage (V)
Threshold Voltage
0.6
0.0
0
12
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
Single Pulse Power
0.3
0.0
−0.3
ID = 250 A
10
8
TA = 25 C
6
−0.6
4
−0.9
2
−1.2
−50 −25
.
0 25 50 75 100 125 150
TJ − Temperature ( C)
0
0.01
0.1
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
10
Time (sec)
1
Duty Cycle = 0.5
100 600
0.2
0.1
0.1
0.05
0.02
0.01
10 −4
Single Pulse
10 −3
10 −2
10 −1
1
Square Wave Pulse Duration (sec)
Notes:
P DM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 176 C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
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