ATF-331M4 データシートの表示（PDF） - Avago Technologies
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ATF-331M4 Datasheet PDF : 14 Pages
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ATF-331M4 DC Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol Parameter and Test Condition
Idss[1] Saturated Drain Current
Vds = 1.5 V, Vgs = 0V
Vp[1]
Pinch-off Voltage
Vds = 1.5 V, Ids = 10% of Idss
Id
Quiescent Bias Current
Vgs = -0.51 V, Vds = 4 V
Gm[1] ] Transconductance
Vds = 1.5 V, Gm = Idss/Vp
Igdo
Gate to Drain Leakage Current
Vgd = -5 V
Igss
Gate Leakage Current
Vgd = Vgs = -4V
NF
Noise Figure
f = 2 GHz Vds = 4 V, Ids = 60 mA
f = 900 MHz Vds = 4 V, Ids = 60 mA
Ga
Associated Gain
f = 2 GHz Vds = 4 V, Ids = 60 mA
f = 900 MHz Vds = 4 V, Ids = 60 mA
OIP3
Output 3rd Order
f = 2 GHz, Vds = 4 V, Ids = 60 mA
Intercept Point [3] 5 dBm Pout/Tone Vds = 4 V, Ids = 60 mA
f = 900 MHz,
5 dBm Pout/Tone
P1dB
1dB Compressed
Output Power [3]
f = 2 GHz Vds = 4 V, Ids = 60 mA
f = 900 MHz Vds = 4 V, Ids = 60 mA
Notes:
1. Guaranteed at wafer probe level
2. Typical values are determined from a sample size of 349 parts from 4 wafers.
3. Measurements obtained using production test board described in Figure 5.
Units
mA
V
mA
mmho
A
A
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Min.
175
-0.65
—
360
—
—
—
—
13.5
—
28.5
—
—
—
Typ.[2]
237
-0.5
60
440
—
42
0.6
0.5
15
21
31
30.8
Max.
305
-0.35
—
—
1000
600
0.8
—
16.5
—
—
—
19
—
18
—
Input
50Ω Input
Transmission Line
Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.13
Γ_ang = 113°
(0.3 dB loss)
50Ω Output
Output
Transmission Line
DUT
Including
Gate Bias T
(0.5 dB loss)
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements.
This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements.
Circuit losses have been de-embedded from actual measurements.
3
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