AUIRFZ44Z データシートの表示（PDF） - Infineon Technologies
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AUIRFZ44Z Datasheet PDF : 12 Pages
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AUIRFZ44Z/ZS
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55 ––– –––
––– 0.054 –––
––– 11.1 13.9
2.0 ––– 4.0
22 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
m VGS = 10V, ID = 31A
V VDS = VGS, ID = 250µA
S VDS = 25V, ID = 31A
µA
VDS = 55V, VGS = 0V
VDS = 55V,VGS = 0V,TJ =125°C
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
––– 29 43
ID = 31A
––– 7.2 11 nC VDS = 44V
––– 12 18
VGS = 10V
––– 14 –––
VDD = 28V
–––
–––
68
33
–––
–––
ns
ID = 31A
RG= 15
––– 41 –––
VGS = 10V
––– 4.5
––– 7.5
–––
–––
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
Coss
Output Capacitance
––– 1420 –––
––– 240 –––
VGS = 0V
VDS = 25V
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
––– 130 –––
––– 830 –––
––– 190 –––
ƒ = 1.0MHz,See Fig.5
pF VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
VGS = 0V, VDS = 44V ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
––– 300 –––
VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
––– ––– 51
––– ––– 200
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
––– ––– 1.2
––– 23 35
––– 17 26
V TJ = 25°C,IS = 31A,VGS = 0V
ns TJ = 25°C ,IF = 31A , VDD = 28V
nC di/dt = 100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by TJmax, starting TJ = 25°C, L = 0.18mH, RG = 25, IAS = 31A, VGS =10V. Part not recommended for use above this value.
ISD 31A, di/dt 840A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 1.0ms; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population 100% tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R is rated at TJ of approximately 90°C.
2
2017-09-25
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