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BA5912BFP データシートの表示(PDF) - ROHM Semiconductor

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BA5912BFP
ROHM
ROHM Semiconductor ROHM
BA5912BFP Datasheet PDF : 6 Pages
1 2 3 4 5 6
5/5
(15) This IC is a monolithic IC which has a P+ isolations and P substrate to isolate elements each other.
This P layer and an N layer in each element form a PN junction to construct various parasitic
elements. Due to the IC structure, the parasitic elements are inevitably created by the potential
relationship.
Activation of the parasitic elements can cause interference between circuits and may result in a
malfunction or, consequently, a fatal damage. Therefore, make sure that the IC must not be used
under conditions that may activate the parasitic elements, for example, applying the lower voltage
than the ground level (GND, P substrate) to the input terminals.
In addition, do not apply the voltage to input terminals without applying the power supply voltage to
the IC. Also while applying the power supply voltage, the voltage of each input terminal must not
be over the power supply voltage, or within the guaranteed values in the electric characteristics.
REV. A

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