CGY 191
25
24
23
22
TG
[dB 21
] 20
19
18
17
16
15
1850
TDMA Mode: Gain vs. f
Vd=3V, Pout=28dBm, Iq=250mA
1860
1870
1880
f [MHz]
1890
1900
1910
35
34
33
32
31
30
29
28
27
26
25
1850
TDMA Mode: Padj vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
1860
1870
1880
f [MHz]
1890
1900
1910
25
24
23
22
21
20
19
18
17
16
15
1850
TDMA Mode: Gain vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
1860
1870
1880
f [MHz]
1890
1900
1910
45
44
43
42
41
40
39
38
37
36
35
1850
TDMA Mode: PAE vs. f
Vd=3V, Pout=28dBm , Iq=250m A
1860
1870
1880
f [MHz]
1890
1900
1910
55
54
53
52
51
50
49
48
47
46
45
1850
TDMA Mode: Palt vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
1860
1870
1880
f [MHz]
1890
1900
1910
45
44
43
42
41
40
39
38
37
36
35
1850
TDMA Mode: PAE vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
1860
1870
1880
f [MHz]
1890
1900
1910
Siemens Aktiengesellschaft
9
Semiconductor Group
9
23.07.1998
HL HF PE 1G9a9A8s-111/-F0o1