MMBT3904T データシートの表示（PDF） - Weitron Technology

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MMBT3904T

General Purpose NPN SiliconTransistor

Weitron Technology 

MMBT3904T

Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)

Characteristics

Symbol

Min

On Characteristics (3)

DC Current Gain

(IC= 0.1 mA , VCE=1.0V)

(IC= 1.0 mA , VCE= 1.0 V)

(IC= 10 mA , VCE= 1.0V)

(IC= 50 mA , VCE= 1.0V)

(IC= 100 mA , VCE= 1.0V)

Collector-Emitter Saturation Voltage (3)

(IC= 10 mA , IB= 1.0mA

(IC= 50 mA , IB= 5.0mA

Base-Emitter Saturation Voltage (3)

(IC= 10 mA , IB= 1.0 mA

(IC= 50 mA , IB= 5.0 mA

40

70

HFE

100

60

30

VCE(sat)

-

-

VBE(sat)

0.65

-

Small-signal Characteristics

Current-Gain-Bandwidth Product

(IC= 10 mA , VCE= 20 V, f=100MHz)

Output Capacitance

(VCB= 5.0 V, IE=0, f=1.0MHz)

Input Capacitance

(VEB= 0.5 V, IC=0, f=1.0MHz)

Input Impedance

(VCE= 10 V, IC=1.0 mA, f=1.0 kHz)

Voltage Feeback Radio

(VCE= 10V, IC=1.0 mA , f=1.0 kHz)

Small-Signal Current Gain

(VCE= 10V, IC=1.0 mA , f=1.0 kHz)

Output Admittance

(VCE= 10V, IC=1.0 mA , f=1.0kHz)

Noise Figure

(VCE= 5.0V, IC= 100 µA ,RS=1.0kΩ, f=1.0kHz)

fT

200

Cobo

-

Cibo

-

hie

1.0

hre

0.5

hfe

100

hoe

1.0

NF

-

Switching Characteristics

Delay Time

Rise Time

(Vcc= 3.0 V , VBE= 0.5V

Ic= 10 mA , IB1= 1.0 mA)

Storage Time

Fall Time

(Vcc= 3.0 V,

Ic= 10 mA , IB1=IB2= 1.0 mA)

3. Pulse Test : Pluse Width ≤ 300 µS, Duty Cycle ≤ 2.0%.

td

-

tr

-

ts

-

tf

-

Max

Unit

-

-

-

300

-

-

0.2

V

0.3

0.85

0.95

V

-

MHz

4.0

pF

8.0

pF

10

kΩ

8.0

x 10-4

400

-

40

umhos

5.0

dB

35

ns

35

200

ns

50

WEITRON

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http://www.weitron.com.tw

28-Sep-09

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