MMBT3904TT1 データシートの表示（PDF） - Willas Electronic Corp.
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MMBT3904TT1 Datasheet PDF : 7 Pages
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WILLAS
FM120-M+
MMBT3904TTT1HRU
1.0AGSeURnFAeCrEaMlOPUuNTrSpCoHOsTeTKTY BrAaRnRsIERisRtEoCTrIsFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produc
NPNFeSailtiucorens
• Batch process design, excellent power dissipation offers
FEAbTeUttRerEreverse leakage current and thermal resistance.
ƽ•SLimowplipfierosfCileircsuuitrfDaecseigmno. unted application in order to
optimize board space.
ƽ• RLooHwSpopwroedruloctsfso,rhpigahckeinffgiccieondcey.suffix "G"
• HHaiglohgceunrrfreenet pcaropdaubcitlitfoy,r lpoawcfkoinrwg acroddveosltuaffgixe "dHro" p.
• High surge capability.
OR• DGEuRarIdNrGingINfoFrOoRveMrAvoTltIaOgNe protection.
• Ultra high-speed switching.
•DSeivliiccoen epitaxial plaMnaarrkcihnigp, metal siSlichoipnpjiunngction.
M•MLBeTa3d9-0fr4eTeTp1arts meet MenAvironment3a0l 0s0ta/Tnadpaer&dRs eoef l
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAXMIMeUcMhRaATnINicGaSl data
• EpoRxayti:nUgL94-V0 rated flamSeyrmebtaorldant Value
Unit
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT-523
0.040(1.0)
0.024(0.6)
C•olCleactsoer–:EMmoitltdeer dVoplltaagsetic, SOD-V12C3EOH
40
Vdc
C•olTleecrtmori–nBaalsse:PVloalttaegdeterminals,VsoClBdOerable per 6M0IL-STD-75V0d,c
0.031(0.8) Typ.
0.031(0.8) Typ.
3
COLLECTOR
Emitter–Base VMolteatgheod 2026 V EBO
6.0
C•olPleocltaorr
iCtyur:rIenndt
i—caCteodntbinyucoautsh
o
d
eI
b
C
a
n
d
200
Vdc
mAdc
Dimensions in1inches and (millimeters)
BASE
• Mounting Position : Any
THERMAL CHARACTERISTICS
• Weight : Approximated 0.011 gram
Characteristic
Symbol
Max
Unit
2
EMITTER
Total DevicMeADXissIMipaUtioMn FRRA–T4INBoGarSd, A(1N) D ELECTRPIDCAL CHAR20A0CTERISmTWICS
RatingTsAa=t 25℃°C ambient temperature unless otherwise specified.
SingleDpehraaste ahbaolfvwea2v5e°,C60Hz, resistive of inductive load.
1.6
mW/°C
For caTphaecirtmivael lRoaedsi,sdtaenracete, Jcuunrrcetinotnbtyo 2A0m%bient
RθJA
600
°C/W
Total Device DisRsiApaTtIiNonGS
MarkingFCRo-4deBoard(2), TA = 25°C
MaximuDmerRaetecuarrbeonvteP2e5a°kCReverse Voltage
MaximuTmheRrMmSalVRoeltsaigsetance, Junction to Ambient
Junction and Storage Temperature
Maximum DC Blocking Voltage
SYMBOLPFDM120-MH FM1303-0M0H FM140-MHmFWM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
VRRM
20
302.4 40 mW/°5C0
60
VRMS RθJA 14
21400 28 °C/W35
42
VDC TJ , Tst2g 0
–55 to +150
°C
30
40
50
60
18
10
115 120
80
100
150
200
56
70
105
140
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
DEVICE MARKING
Peak Forward Surge Current 8.3 ms single half sine-wave
superimMpoMsBedTo3n90ra4teTdT1loa=dM(JAEDEC method)
IFSM
30
TypEicLaEl TChTerRmIaCl AReLsiCstHanAceR(ANCotTeE2R) ISTICS (TA = 25°CRuΘnJAless otherwise noted.)
Typical Junction Capacitance (Note 1)
Operating TemperatuCrehRaarancgteeristic
CJ
TJ Symbol -55 to M+1in25
StoOraFgeFTCeHmApeRraAtuCreTREaRnIgSeTICS
TSTG
40
120
Max
Unit
-55 to +150
- 65 to +175
Collector–Emitter Breakdown Voltage(3)
CHARACTERISTICS
Maximu(ImCF=o1rw.0amrdAVdoclt)age at 1.0A DC
MaximuCmolAlevcetorarg–eBaRseeveBrrseeaCkduorrwennt Vaot lta@gTeA=25℃
Rated D(ICC =Blo1c0kµinAgdVco) ltage
@T A=125℃
Emitter–Base Breakdown Voltage
V (BR)CEO
40
—
Vdc
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
V (BR)CBO
IR
V (BR)EBO
0.50
0.70
0.85
60
—
Vdc0.5
10
6.0
—
Vdc
0.9
0.92
NOTES:(I E = 10 µAdc)
1- MeasBuraesdeaCt 1uMtoHffZCaunrdreanptplied reverse voltage of 4.0 VDC.
I BL
—
50
nAdc
2- Therm( aVl RCEe=sis3t0anVcedcF,roVmEBJu=nc3t.io0nVtodcA,m)bient
Collector Cutoff Current
I CEX
—
50
nAdc
( V CE = 30Vdc, V BE = 3.0Vdc )
1. FR-4 Minimum Pad.
2. FR-4 1.0 x 1.0 Inch Pad.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
2012-112012-06
WILLASWEILLLEACSTRELOENCICTRCOONRICP.COR
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