MMBT3904TT1 データシートの表示（PDF） - Willas Electronic Corp.
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MMBT3904TT1 Datasheet PDF : 7 Pages
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WILLAS
FM120-M
MMBT3904TT1THRU
1.0GA SeUnRFeArCaE lMPOUuNrTpSCoHsOTeTKTYrBaAnRRsIEiRsRtoECrTsIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
+3 V
D30U0TnYsCY••CLUGElut=raa2r%dhriignhg-sfo+p1re0oe.9vdeVsrvwoitlctahginegp. rotection. 275
10 < t1 < 500 ms
t1
DUTY CYCLE = 2%
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts mee1t0eknvironmental standards of
0
-ā0.5 V
MIL-STD-19500 /228
• RoHS product<fo1rnpsacking code suffix "G" CS < 4 pF*
Halogen free product for packing code suffix "H"
Mechanical data
-ā9.1 V
+10.9 V
0.146(3.7)
0.130(3.3)
+3 V
10 k
< 1 ns
1N91k
• Epoxy : UL94-V0 rated flame retardant
0.012(0.3) Typ.
270.5071(1.8)
0.056(1.4)
CS < 4 pF*
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123*HTotal shunt capacitance of test jig and con0n.0e31c(t0o.8r)sTyp.
0.031(0.8) Typ.
,
• TFeigrmurinea1ls. :DPelalateydatnedrmRinisaels,Tsimoldeerable per MIL-STD-750
Figure 2. Storage and Fall Time
EquivaMleentht oTdes2t02C6ircuit
Equivalent Test Circuit
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R1a0tings at 25℃ ambient temperature unless otherwise specified.
S7i.n0gle phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
5000
3000
2000
VCC = 40 V
IC/IB = 10
5.0
RATINGS
Marking Code
Maximum Recurrent Peak ReveCrsibeoVoltage
M3a.0ximum RMS Voltage
Maximum DC Blocking Voltage
2.0
Cobo
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
1000
12
70103
14
15
16
18
10
115 120
VRRM
20
50300
40
50
60
80
100
150
200
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
32003000
40
50
60 QT 80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
QA
Peak Forward Surge Current 8.3 ms single half sine-wave
su1p.0erimposed on rated load (JEDEC method)
Typi0c.a1l The0r.m2 a0l .R3es0is.5tan0c.7e 1(N.0ote 22).0 3.0 5.0 7.0 10
IFSM
RΘ20JA 30 40
100
70
50
1.0
30
2.0 3.0 5.0 7.0 10 40 20 30 50 70 100 200
Typical Junction CapRaEcVitEaRnScEe B(NIAoSteV1O)LTAGE (VOLTS)
Operating Temperature Range
Storage Temperature RFaignugere 3. Capacitance
CJ
TJ
TSTG
-55 to +125
IC, COLLECTOR1C2U0RRENT (mA)
-55 to +150
Figure 4-.6C5htoar+g1e75Data
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-11 2012-06
WILLAS WELILELCATSREOLNEICCTCROONRIPC. COR
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