MMBT3904TT1 データシートの表示（PDF） - Willas Electronic Corp.

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MMBT3904TT1

General Purpose Transistors

Willas Electronic Corp. 

WILLAS

FM120-M+

MMBT3904TTT1HRU

1.0AGSeURnFeACrEaMlOPUuNTrSpCoHOsTeTKTY BraARnRsIERisRtEoCTrIsFIERS -20V- 200V

FM1200-M

SOD-123+ PACKAGE

Pb Free Produc

Features

Package outline

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

SOD-123H

optimize board space.

• Low power loss, high efficiency.

S27-523

• High current capability, low forward voltage drop.

0.146(3.7)

0.130(3.3)

• High surge capability.

• Guardring for overvoltage protection.

• Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silicon junction.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

Mechanical data

.067(1.70)

.059(1.50)

• Epoxy : UL94-V0 rated flame retardant

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.040(1.0)

0.024(0.6)

• Case : Molded plastic, SOD-123H

,

• Terminals :Plated terminals, solderable per MIL-STD-750

0.031(0.8) Typ.

0.031(0.8) Typ.

Method 2026

• Polarity : Indicated by cathode band

Dimensions in inches and (millimeters)

• Mounting Position : Any

• Weight : Approximated 0.011 gram

.014(0.35)

MAXIMUM RATINGS AND ELECTRICA.0L1C0H(A0R.2A5C)TERISTICS

.043(1.10) Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half wave, 60Hz, resistive of inductive load.

.035(0.90) For capacitive load, derate current by 20%

.008(0.20)

.004(0.10)

RATINGS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M

Marking Code

Maximum Recurrent Peak Reverse Voltage

12

13

14

15

16

VRRM

20

30

40

50

60

18

10

115 120

80

100

150

200

Maximum RMS Voltage

VRMS

14

21

28

35

42

56

70

105

140

Maximum DC Blocking Voltage

VDC

20

30

40

50

60

80

100

150

200

Maximum Average Forward Rectified Current

IO

1.0

.004(0.10)MAX. Peak Forward Surge Current 8.3 ms single half sine-wave IFSM

superimposed on rated load (JEDEC method)

Typical Thermal Resistance (Note 2)

RΘJA

Typical Junction Capacitance (Note 1)

CJ

Operating Temperature Range

TJ

Storage Temperature Range

TSTG

.014(0.35)

-55 to +125

30

40

120

- 65 to +175

-55 to +150

.006(0.15) CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

VF

0.50

0.70

0.85

0.9

0.92

Maximum Average Reverse Current at @T A=25℃

IR

0.5

Rated DC Blocking Voltage

@T A=125℃

10

NOTES:

1- Measured at 1 MHZ and Dimensions in applied reverse voltage of 4.0 VDC. inches and (millimeters)

2- Thermal Resistance From Junction to Ambient

2012-112012-06

WILLASWEILLLEACSTRELOENCICTRCOONRICP.COR

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