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EMIF01-10018W5 データシートの表示(PDF) - STMicroelectronics

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EMIF01-10018W5
ST-Microelectronics
STMicroelectronics ST-Microelectronics
EMIF01-10018W5 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
EMIF01-10018W5
CROSSTALK BEHAVIOR
1- Crosstalk phenomena
Fig. A7: Crosstalk phenomena
RG1
VG1
RG2
VG2
line 1
line 2
α1VG1 + β12VG2
RL1
RL2
α2VG2 + β21VG1
DRIVERS
RECEIVERS
The crosstalk phenomena are due to the coupling between 2 lines. The coupling factor ( β12 or β21 ) increases when the
gap across lines decreases, particularly in silicon dice. In the example above the expected signal on load RL2 is α2VG2, in
fact the real voltage at this point has got an extra value β21VG1. This part of the VG1 signal represents the effect of the
crosstalk phenomenon of the line 1 on the line 2. This phenomenon has to be taken into account when the drivers impose
fast digital data or high frequency analog signals in the disturbing line. The perturbed line will be more affected if it works
with low voltage signal or high load impedance (few k). The following chapters give the value of both digital and analog
crosstalk.
2- Digital Crosstalk
Fig. A8: Digital crosstalk measurement
+5V
74HC04
Line 1
Square
+5V
Pulse
Generator
5KHz
VG1
Line 2
+5V
74HC04
EMIF01
10018W5
β21 VG1
Figure A8 shows the measurement circuit used to quantify the crosstalk effect in a classical digital application.
Figure A9 shows that in such a condition signal from 0 to 5V and rise time of few ns, the impact on the disturbed line is less
than 50mV peak to peak. No data disturbance was noted on the concerned line.The measurements performed with falling
edges gives an impact within the same range.
Fig. A9: Digital crosstalk results
6/10
VG1
β21VG1

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