EMIF04-2005QCF(2002) データシートの表示（PDF） - STMicroelectronics
部品番号
コンポーネント説明
メーカー
EMIF04-2005QCF Datasheet PDF : 4 Pages
| |||
EMIF04-2005QCF
ABSOLUTE RATINGS (Tamb = 25°C)
Symbol
Parameter and test conditions
Value
Unit
VPP
ESD discharge
EC61000-4-2 air discharge
IEC61000-4-2 contact discharge
± 15
kV
±8
Tj
Junction temperature
125
°C
Tstg
Storage temperature range
-55 + 150
°C
Top
Operating temperature range
-40 to + 85
°C
TL
Maximum lead temperature for soldering during 10s at 5mm from case
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C)
Symbol
Parameter
VBR
Breakdown voltage
IRM
Leakage current @ VRM
VRM
Stand-off voltage
VCL
Clamping voltage
IPP
Peak pulse current
αT
Voltage temperature coefficient
VF
Forward voltage drop
Symbol
VBR
IRM
Rd
RI/O
Cin
Test conditions
IR = 1 mA
VRM = 3V per line
IPP = 10A, tp = 2.5µs (see note 1)
@ 0V bias
Fig. 1: Filtering behavior.
-5.00
Emif04: S21(dB) response
Aplac 7.62 User: STMicroelectronics
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
100.0k
1.0M
EMIF04-2005QCF
10.0M
f/Hz
100.0M
1.0G
I
IF
VBR
VCL
VRM
VF
V
IRM
Slope = 3/Rd
IPP
Min.
Typ.
Max.
Unit
6
8
10
V
500
µA
1
Ω
180
200
220
Ω
45
50
pF
Fig. 2: Capacitance versus reverse applied voltage.
CLine(pF)
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VR(V)
C(V)
2/4
Share Link: 