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SB1150 データシートの表示(PDF) - Jiangsu High diode Semiconductor Co., Ltd

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SB1150
HDSEMI
Jiangsu High diode Semiconductor Co., Ltd HDSEMI
SB1150 Datasheet PDF : 4 Pages
1 2 3 4
SB1150 THRU SB1200
DO-4 1 Plastic-Encapsulate Diodes
Schottky Rectifier
Features
Io
1A
VRRM
150V-200V
High surge current capability
Polarity: Color band denotes cathode
DO-4 1
Applications
Rectifier
Marking
SB1150/SB1200
HD ZC32
Item
Symbol Unit
Conditions
Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
Average Forward Current
IF(AV)
Surge(Non-repetitive)Forward
Current
Junction Temperature
Storage Temperature
IFSM
TJ
TSTG
V
V
A
60Hz Half-sine wave, Resistance
load, Ta=100
A
60Hz Half-sine wave,1 cycle,
Ta=25
SB1
150
200
150
200
105
140
1.0
30
-55 ~ +150
-55 ~ +150
Electrical Characteristics (Ta=25Unless otherwise specified
Item Symbol Unit
Test Condition
150
Peak Forward
Voltage
Peak Reverse
Current
Thermal
Resistance(Typical)
VFM
IRRM1
IRRM2
RθJ-A
RθJ-L
V
mA
/W
IFM=1.0A
VRM=VRRM
Ta=25
Ta=100
Between junction and ambient
Between junction and lead
SB1
200
0.95
0.1
10
50
15
High Diode Semiconductor
1

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