SCH1435-TL-H データシートの表示（PDF） - ON Semiconductor

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SCH1435-TL-H

Power MOSFET 30V, 89mΩ, 3A, Single N-Channel

ON Semiconductor 

SCH1435

Power MOSFET

30V, 89mΩ, 3A, Single N-Channel

This low-profile high-power MOSFET is produced using ON

Semiconductor’s trench technology, which is specifically designed to

minimize gate charge and ultra low on resistance. This device is suitable for

applications with low gate charge driving or ultra low on resistance

requirements.

Features

• Low On-Resistance

• 1.8V drive

• ESD Diode-Protected Gate

• Pb-Free, Halogen Free and RoHS compliance

• Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)

Typical Applications

• Load Switch

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)

Parameter

Symbol

Value

Unit

Drain to Source Voltage

VDSS

30

V

Gate to Source Voltage

VGSS

±12

V

Drain Current (DC)

ID

3

A

Drain Current (Pulse)

PW ≤ 10μs, duty cycle ≤ 1%

IDP

12

A

Power Dissipation

When mounted on ceramic substrate

PD

(900mm2 × 0.8mm)

0.8

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Junction to Ambient

When mounted on ceramic substrate

(900mm2 × 0.8mm)

Symbol

RθJA

Value

Unit

156.2 °C/W

www.onsemi.com

VDSS

30V

RDS(on) Max

89mΩ@ 4.5V

126mΩ@ 2.5V

195mΩ@ 1.8V

ID Max

3A

ELECTRICAL CONNECTION

N-Channel

1, 2, 5, 6

1 : Drain

2 : Drain

3

3 : Gate

4 : Source

5 : Drain

6 : Drain

4

PACKING TYPE : TL MARKING

ZL

TL

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2015

1

August 2015 - Rev. 2

Publication Order Number :

SCH1435/D

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