Q68000-A2485 データシートの表示（PDF） - Siemens AG

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Q68000-A2485

PNP Silicon Darlington Transistors

Siemens AG 

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 10 µA

Collector-base breakdown voltage

IC = 10 µA

Emitter-base breakdown voltage

IE = 10 µA

Collector-base cutoff current

VCB = 30 V

Emitter cutoff current

VEB = 10 V

DC current gain1)

IC = 10 mA, VCE = 5 V

IC = 100 mA, VCE = 5 V

SMBTA 63

SMBTA 64

SMBTA 63

SMBTA 64

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

Base-emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

AC characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

SMBTA 63

SMBTA 64

Symbol

Values

Unit

min. typ. max.

V(BR)CE0 30

–

V(BR)CB0 30

–

V(BR)EB0 10

–

ICB0

–

–

IEB0

–

–

hFE

VCEsat

5000 –

10000 –

10000 –

20000 –

–

–

VBEsat

–

–

–

V

–

–

100 nA

100

–

–

–

–

–

1.5 V

2

fT

125 –

–

MHz

1) Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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