SSF2816E データシートの表示（PDF） - GOOD-ARK
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SSF2816E Datasheet PDF : 6 Pages
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Main Product Characteristics
VDSS
20V
RDS(on) 16.5mohm(typ.)
ID
7A
TSSOP-8
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
2KV ESD Protected
Lead free product
SSF2816E
20V Dual N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
7
25
1.5
20
± 12
-55 to +150
Units
A
W
V
V
°C
Thermal Resistance
Symbol
RθJA
Characteristics
Junction-to-ambient (t ≤ 10s) ④
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Page 1 of 6
Typ.
—
Max.
83
Units
℃/W
Rev.1.2
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