SSF2816E データシートの表示（PDF） - GOOD-ARK
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SSF2816E Datasheet PDF : 6 Pages
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SSF2816E
20V Dual N-Channel MOSFET
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
V(BR)DSS Drain-to-Source breakdown voltage
RDS(on) Static Drain-to-Source on-resistance
VGS(th)
IDSS
IGSS
gFS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Forward Transconductance
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
20
—
—
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
16.5
17
19
22
0.75
—
—
—
6.6
10
2.3
3
10
11
35
30
600
330
140
Max.
—
22
23
26
30
1.2
1
±200
±10
—
15
—
—
20
25
70
60
—
—
—
Units
V
mΩ
V
μA
nA
uA
S
nC
ns
pF
Conditions
VGS = 0V, ID = 250μA
VGS=4.5V,ID = 6.5A
VGS=4V,ID = 6A
VGS=3.1V,ID = 5.5A
VGS=2.5V,ID = 5.5A
VDS = VGS, ID = 250μA
VDS = 20V,VGS = 0V
VGS=±4.5V,VDS=0V
VGS=±10V,VDS=0V
VDS=10V,ID=6.5A
VDS=10V,
ID=7A,
VGS=4.5V
VDD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
VGS = 0V
VDS = 8V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Min. Typ. Max.
—
—
7
—
—
25
—
0.84 1.2
Units
A
A
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=1.5A, VGS=0V
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Page 2 of 6
Rev.1.2
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