SSF2307B データシートの表示（PDF） - Silikron Semiconductor Co.,LTD.

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SSF2307B

High Power and current handing capability

Silikron Semiconductor Co.,LTD. 

SSF2307B

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Drain-Source On-State Resistance

Forward Transconductance

DYNAMIC CHARACTERISTICS (Note4)

VGS(th)

RDS(ON)

gFS

VDS=VGS,ID=-250μA

VGS=-4.5V, ID=-3A

VGS=-2.5V, ID=-2A

VDS=-5V,ID=-3A

-0.5

-1

V

65

90

mΩ

90 115

7

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Clss

1160

PF

Coss

VDS=-10V,VGS=0V,

F=1.0MHz

210

PF

Crss

125

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t d(on)

13.6 27.2

nS

Turn-on Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

tr

td(off)

tf

VDD=-10V,ID=-3A

VGS=-4.5V,RGEN=3Ω

8.6 17.2

nS

73.6 147.2

nS

34.6 69.2

nS

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

DRAIN-SOURCE DIODE CHARACTERISTICS

VDS=-10V,ID=-3A,VGS=-4.5V

9.6 12.7

nC

1.1

nC

2.6

nC

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=-1A

-1.2

V

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

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