BSX46 データシートの表示（PDF） - New Jersey Semiconductor
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BSX46 Datasheet PDF : 4 Pages
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NPN medium power transistors
BSX45; BSX46; BSX47
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
BSX45
BSX46
BSX47
VCEO
collector-emitter voltage
BSX45
BSX46
BSX47
VEBO
Ic
ICM
IBM
Plot
Tstg
Tj
Tamb
emitter-base voltage
collector current(DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tcase < 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
R-th j-c
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
MIN.
MAX.
UNIT
-
80
V
-
100
V
-
120
V
-
40
V
-
60
V
-
80
V
-
7
V
-
1
A
-
1.5
A
-
200
mA
-
6.25
W
-65
+150
°C
-
200
°C
-65
+150 °c
VALUE
200
28
UNIT
K/W
K/W
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