SD1727(2004) データシートの表示（PDF） - STMicroelectronics

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SD1727
(Rev.:2004)

RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS

STMicroelectronics 

SD1727 (THX15)

Table 2. Absolute Maximum Ratings (Tcase = 25°C)

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Device Current

PDISS

Power Dissipation

TJ

Junction Temperature

TSTG

Storage Temperature

Value

Unit

110

V

55

V

4.0

V

10

A

233

W

+200

°C

– 65 to +150

°C

Table 3. Thermal Data

Symbol

Parameter

Value

Unit

RTH(j-c)

Junction-Case Thermal Resistance

ct(s) ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

rodu Table 4. Static

P Symbol

Test Conditions

lete BVCBO

so BVCES

b BVCEO

- O BVEBO

t(s) ICEO

c ICES

u hFE

IC = 100 mA; IE = 0 mA

IC = 100 mA; VBE = 0 V

IC = 100 mA; IB = 0 mA

IE = 10 mA; IC = 0 mA

VCE = 30 V; IE = 0 mA

VCE = 60 V; IE = 0 mA

VCE = 6 V; IC = 1.4 A

Prod Table 5. Dynamic

te Symbol

Test Conditions

ole POUT

ObsGP (1)

f = 30 MHz; VCE = 50 V; ICQ = 100 mA

POUT = 150 W PEP; VCE = 50 V; ICQ = 100 mA

0.75

°C/W

Min.

110

110

55

4.0

—

—

18

Value

Typ.

—

—

—

—

—

—

—

Max.

—

—

—

—

5

5

43.5

Unit

V

V

V

V

mA

mA

—

Min.

150

14

Value

Typ.

—

—

Max.

—

—

Unit

W

dB

IMD (1)

POUT = 150 W PEP; VCE = 50 V; ICQ = 100 mA

—

—

–30

dBc

ηc(1)

POUT = 150 W PEP; VCE = 50 V; ICQ = 100 mA

37

—

—

%

COB

f = 1 MHz; VCB = 50 V

Note: The SD1727 is also usable in Class A at 40 V. Typical performance is:

POUT = 30 W PEP, GP = 14 dB, IMD = – 40dBc

Note: 1. f1 = 30.00 MHz; f2 = 30.001 MHz

—

—

220

pF

2/9

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