TSUS4300(1999) データシートの表示（PDF） - Vishay Semiconductors
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TSUS4300 Datasheet PDF : 5 Pages
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TSUS4300
Vishay Telefunken
GaAs Infrared Emitting Diode in ø 3 mm (T–1) Package
Description
TSUS4300 is an infrared emitting diode in standard
GaAs on GaAs technology, molded in a clear,
blue tinted plastic package. Its lens provides a
high radiant intensity without external optics.
Features
D High radiant power and radiant intensity
D Low forward voltage
D Suitable for DC and high pulse current operation
D Standard T–1(ø 3 mm) package
D Angle of half intensity ϕ = ± 16°
94 8636
D Peak wavelength lp = 950 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
Infrared remote control systems with small package and low cost requirements in combination with silicon photo
detectors. Infrared source in reflective sensors, tabe end detection. Excellent matching with phototransistor
TEFT 4300.
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
tp/T=0.5, tp=100 ms
tp=100 ms
xt 5sec, 2 mm from case
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
5
V
100
mA
200
mA
2
A
170
mW
100
°C
–55...+100 °C
–55...+100 °C
260
°C
450
K/W
Document Number 81053
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
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